Residual Stress in Ni-Mn-Ga Thin Films Deposited on Different Substrates

Authors

S. Doyle, ANKA
V. A. Chernenko, Institute of Magnetism
S. Besseghini, CNR-IENI
A. Gambardella, CNR-IENI
M. Kohl, IMT
Peter Müllner, Boise State UniversityFollow
M. Ohtsuka, Tohoku University

Document Type

Article

Publication Date

5-1-2008

Abstract

Four series of Ni_51.4Mn_28.3Ga_20.3/substrate thin film composites, where the substrate is either Si(100), MgO(100), alumina or Mo foil, and two series of Ni_53.5Mn_23.8Ga_22.7/substrate composites where the substrate is either alumina or Mo foil, with different film thicknesses varying from 0.1 to 5 μm have been studied in the cubic phase by XRD stress measurements. The values of residual stresses are found to be dependent on both substrate and film thickness. In the submicron range, a correlation between thickness dependencies of residual stress and transformation temperatures is experimentally obtained. The temperature dependence of the d-spacing d₂₂₀ is studied for the films deposited on Si(100).

Publication Information

Doyle, S.; Chernenko, V. A.; Besseghini, S.; Gambardella, A.; Kohl, M.; Müllner, Peter; and Ohtsuka, M.. (2008). "Residual Stress in Ni-Mn-Ga Thin Films Deposited on Different Substrates". The European Physical Journal - Special Topics, 158(1), 99-105. https://doi.org/10.1140/epjst/e2008-00660-8