Creating a Microplasma Discharge Using an RF Generated Plasma Source

Document Type

Student Presentation

Presentation Date

4-15-2013

Faculty Sponsor

Jim Browning

Abstract

A device is needed that will withstand harsh environments because normal semiconductors are incapable of functioning at high temperatures (> 150 C) and in high radiation environment. Microplasma based devices are being developed for this purpose. The device consists of a slit structure in a dielectric material. The slits range in size from 0.3 to 1.2 mm. Device fabrication includes Low Temperature Co-fired Ceramic (LTCC), which contains an Radio-Frequency (RF) antenna and three DC terminals. The RF antenna operates from 800 to 1000 MHz. The DC terminals serve the same purpose as in a normal transistor. Results of the experimental measurements of the device Current-Voltage characteristics will be presented for a range of gas pressures, RF powers, and slit dimensions.

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