Investigations of Conduction Mechanisms of Ion-Conducting, Bridging Memory Devices (CBRAM/PMC/ECM)

Author

Kyle Bradley Campbell, Boise State UniversityFollow

Publication Date

8-2012

Type of Culminating Activity

Thesis

Degree Title

Master of Science in Electrical Engineering

Department

Electrical and Computer Engineering

Supervisory Committee Chair

Kristy A. Campbell, Ph.D.

Abstract

Electron storage memory devices are approaching the minimum dimensions that are physically possible due to the onward march of Moore’s law. To continue to enable the increased memory densities needed for today’s applications, especially low power and size constrained mobile devices, new memory solutions are needed. Several candidates are emerging in this space. Metal ion-conducting memory devices are being investigated due to excellent scalability, speed, and low power. These devices are part of a memory class called resistive memory. In the literature, they are referred to as CBRAM (conductive bridge random access memory), PMC (programmable metallization cell), ECM (electrochemical metallization cell), and Atomic Switch.

This work seeks to understand the ion-conduction mechanisms that are occurring in switching devices comprised of W/Ge₃₂Se₆₈/Ag, bottom to top, called Ag-only throughout, and in switching devices comprised of W/Ge₃₂Se₆₈/SnSe/Ag/W, bottom to top, called Ag+SnSe throughout. Additionally, the electron-conduction mechanisms in the Ge₃₂Se₆₈ memory layer are investigated using devices comprised of W/Ge₃₂Se₆₈/W. The experimental method used to analyze the devices was DC voltage sweep across multiple temperatures over the range of 300 K to 10 K.

Recommended Citation

Campbell, Kyle Bradley, "Investigations of Conduction Mechanisms of Ion-Conducting, Bridging Memory Devices (CBRAM/PMC/ECM)" (2012). Boise State University Theses and Dissertations. 275.
https://scholarworks.boisestate.edu/td/275