Publication Date
12-2025
Date of Final Oral Examination (Defense)
9-19-2025
Type of Culminating Activity
Dissertation
Degree Title
Doctor of Philosophy in Materials Science and Engineering
Department
Materials Science and Engineering
Supervisory Committee Chair
Elton Graugnard, Ph.D.
Supervisory Committee Member
David Estrada, Ph.D.
Supervisory Committee Member
Steven Hues, Ph.D.
Supervisory Committee Member
Somik Mukherjee, Ph.D.
Abstract
As new microelectronic device architectures continue to shrink in size while simultaneously increasing in complexity and performance, traditional channel materials such as polysilicon begin to face increasing difficulty in meeting performance goals. Layered two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) are prime candidates to meet these challenges. Although monolayer MoS2 is atomically thin, it has the potential for high carrier mobilities due to charge confinement along the crystal plane. To enable the integration of MoS2 in the high volume manufacturing of microelectronic devices, scalable processes must be developed.
The atomic layer deposition (ALD) of MoS2 is one such method. Characterized by a surface-sensitive, self-limiting nature, ALD has a high degree of control over film thickness. Due to the surface-sensitive nature, ALD can deposit conformal films within deep, complex structures. These properties offer the potential for depositing conformal MoS2 films with a high level of control and precision. I have investigated different methods of obtaining monolayer MoS2, either converting a molybdenum oxide (MoOx) film into MoS2 or annealing an amorphous MoSx film into crystalline MoS2. This investigation involved a new MoOx ALD process using an organometallic precursor and water, followed by a study on correlating deposition cycle number with monolayer formation and film quality as indicated by photoluminescence response. The research developed greater insights into the methods for obtaining monolayer MoS2 without losing sight of the need for the process to be compatible with existing methods used in industry.
DOI
https://doi.org/10.18122/td.2458.boisestate
Recommended Citation
Jen, Wesley, "Atomic Layer Deposition and Atomic Scale Processing of Molybdenum Oxide and Sulfide Thin Films" (2025). Boise State University Theses and Dissertations. 2458.
https://doi.org/10.18122/td.2458.boisestate