Exploring the Effects of Dopants on the Opto-Electrical Response of Ge₂Se₃-Based Optically Gated Transistor (OGT)

Author

Md Faisal Kabir, Boise State UniversityFollow

Publication Date

5-2024

Date of Final Oral Examination (Defense)

12-21-2023

Type of Culminating Activity

Dissertation

Degree Title

Doctor of Philosophy in Electrical and Computer Engineering

Department Filter

Electrical and Computer Engineering

Department

Electrical and Computer Engineering

Supervisory Committee Chair

Kris Campbell, Ph.D.

Supervisory Committee Member

Jim Browning, Ph.D.

Supervisory Committee Member

David Estrada, Ph.D.

Abstract

In this work, the electrical and optical responses of chalcogenide glass (ChG) Ge₂Se₃-based optically gated transistors (OGTs) were investigated. The device can act as a selector for resistive memory devices and potentially enable the production of functional high-density resistive (and memristive) arrays.

The OGT was developed using a Ge₂Se₃-based material heterostructure and demonstrated to successfully gate a memristor with light. The light intensity provided a built-in compliance current, allowing multi-state programming. By varying the light intensity incident on Ge₂Se₃ material, a family of current-voltage (I-V) curves were measured that are similar to those obtained with a metal oxide semiconductor field-effect transistor (MOSFET).

Based on these promising findings, I proceeded to investigate how the OGT operation could be influenced by subtle changes in the material layers, specifically through doping to see if the current blocking ability as a selector device, the wavelength sensitivity, compliance current amplitudes, and speed could be altered. To explore this, I made and performed electrical characterization on devices with dopants ranging from the Group IV elements (C, Si, Sn, Pb) to several metal dopants from both the transition metal and main group series (Ag, Al, Cr, Cu, Ti, W).

DOI

https://doi.org/10.18122/td.2216.boisestate

Recommended Citation

Kabir, Md Faisal, "Exploring the Effects of Dopants on the Opto-Electrical Response of Ge₂Se₃-Based Optically Gated Transistor (OGT)" (2024). Boise State University Theses and Dissertations. 2216.
https://doi.org/10.18122/td.2216.boisestate