Electrical Switching Studies of Chalcogenide-Based Ion-Conducting Variable Resistance Devices

Author

Beth Rose Cook, Boise State UniversityFollow

Publication Date

5-2011

Type of Culminating Activity

Thesis

Degree Title

Master of Science in Electrical Engineering

Department

Electrical and Computer Engineering

Supervisory Committee Chair

Kristy A. Campbell, Ph.D.

Abstract

In this work, ion-conducting devices using layers of chalcogenide materials are explored as potential non-volatile memory devices. This technology is also known in the literature as conductively bridged RAM (CBRAM), programmable metallization cell (PMC), and programmable conductor RAM (PCRAM; not to be confused with the acronym PCRAM as used to denote phase-change memory).

Electrical measurements with five different programming currents at four temperatures have been performed on two-terminal devices comprised of silver with a metal-selenide and germanium-chalcogenide layer. The metal-selenide layer is Sb₂Se₃, SnSe, PbSe, In₂Se₃, or Ag₂Se. The germanium-chalcogenide layer is either Ge₂Se₃ or GeTe. Total ionizing dose radiation effects are also investigated for GeTe/SnSe/Ag and Ge₂Se₃/SnSe/Ag devices.

Recommended Citation

Cook, Beth Rose, "Electrical Switching Studies of Chalcogenide-Based Ion-Conducting Variable Resistance Devices" (2011). Boise State University Theses and Dissertations. 193.
https://scholarworks.boisestate.edu/td/193