Ultraviolet Raman Spectroscopy of Nanoscale Ferroelectric Thin Films and Superlattices

Document Type

Article

Publication Date

1-1-2012

Abstract

Untraviolet Raman spectroscopy has emerged as a powerful technique for characterization of nanoscale materials, in particular, wide-bandgap semiconductors and dielectrics. The advantages of ultraviolet excitation for Raman measurements of ferroelectric thin films and heterostructures, such as reduced penetration depth and enhanced scattering intensity, are discussed. Recent results of application of ultraviolet Raman spectroscopy for studies of the lattice dynamics and phase transitions in nanoscale ferrelectric structures, such as superlattices based on BaTiO3, SrTiO3, and CaTiO3, as well as ultrathin films of BaTiO3 and SrTiO3 are reviewed.

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