High-Performance Infrared Photodetector Based on InAs/GaAs Submonolayer Quantum Dots Grown at High Temperature with a (2×4) Surface Reconstruction

Authors

A. Alzeidan, University of Sao Paulo
T. F. Cantalice, University of Sao Paulo
K. E. Sautter, Boise State University
K. D. Vallejo, Boise State University
P. J. Simmonds, Boise State University
A. A. Quivy, University of Sao Paulo

Document Type

Article

Publication Date

8-16-2024

Abstract

We studied the impact of surface reconstruction on the performance of infrared photodetectors containing InAs/GaAs submonolayer quantum dots (SMLQDs) grown by molecular beam epitaxy. Adjusting the substrate temperature before InAs deposition allowed us to move between the conventional c(4×4) reconstruction of the GaAs(001) surface, observed at low growth temperatures, and the (2×4) reconstruction which can only be stabilized at higher sample temperatures than those commonly used to deposit InAs. Photodetectors based on SMLQDs grown on such a (2×4) surface reconstruction outperformed those grown on a c(4×4) reconstruction and provided specific detectivities as high as 8.3×10¹¹ cm Hz^1/2 W⁻¹ at 12 K. This increase in performance is due to the nucleation of true two-dimensional InAs islands which are the building blocks of SMLQDs and can only form on a (2×4)-reconstructed GaAs(001) surface.

Publication Information

Alzeidan, A.; Cantalice, T. F.; Sautter, K. E.; Vallejo, K. D.; Simmonds, P. J.; and Quivy, A. A. (2024). "High-Performance Infrared Photodetector Based on InAs/GaAs Submonolayer Quantum Dots Grown at High Temperature with a (2×4) Surface Reconstruction". Sensors and Actuators A: Physical, 374, 115464. https://doi.org/10.1016/j.sna.2024.115464