Self-Assembly of Tensile-Strained Ge Quantum Dots on InAlAs(111)A

Authors

Kathryn E. Sautter, Boise State University
Christopher F. Schuck, Boise State University
Trent A. Garrett, Boise State University
Ariel E. Weltner, Boise State University
Kevin D. Vallejo, Boise State University
Dingkun Ren, University of California
Baolai Liang, University of California
Kevin A. Grossklaus, Tufts University
Thomas E. Vandervelde, Tufts University
Paul J. Simmonds, Boise State UniversityFollow

Document Type

Article

Publication Date

3-1-2020

Abstract

A recently developed growth technique enables the self-assembly of defect-free quantum dots on (111) surfaces under large tensile strains. We demonstrate the use of this approach to synthesize germanium (Ge) quantum dots on In_0.52Al_0.48As(111)A with >3% residual tensile strain. We show that the size and areal density of the tensile-strained Ge quantum dots are readily tunable with growth conditions. We also present evidence for an unusual transition in the quantum dot growth mode from Stranski-Krastanov to Volmer-Weber as we adjust the substrate temperature. This work positions Ge quantum dots as a promising starting point for exploring the effects of tensile strain on Ge’s band structure.

Publication Information

Sautter, Kathryn E.; Schuck, Christopher F.; Garrett, Trent A.; Weltner, Ariel E.; Vallejo, Kevin D.; Ren, Dingkun; Liang, Baolai; Grossklaus, Kevin A.; Vandervelde, Thomas E.; and Simmonds, Paul J. (2020). "Self-Assembly of Tensile-Strained Ge Quantum Dots on InAlAs(111)A". Journal of Crystal Growth, 533, 125468. https://doi.org/10.1016/j.jcrysgro.2019.125468