Selective-Area Growth of Heavily n–Doped GaAs Nanostubs on Si(001) by Molecular Beam Epitaxy

Authors

Yoon Jung Chang, UCLA
Paul J. Simmonds, Boise State UniversityFollow
Brett Beekley, UCLA
Mark S. Goorsky, UCLA
Jason C.S. Woo, UCLA

Document Type

Article

Publication Date

4-18-2016

Abstract

Using an aspect ratio trapping technique, we demonstrate molecular beam epitaxy of GaAs nanostubs on Si(001) substrates. Nanoholes in a SiO₂ mask act as a template for GaAs-on-Si selective-area growth(SAG) of nanostubs 120 nm tall and ≤100 nm in diameter. We investigate the influence of growthparameters including substrate temperature and growth rate on SAG. Optimizing these parameters results in complete selectivity with GaAsgrowth only on the exposed Si(001). Due to the confined-geometry, strain and defects in the GaAs nanostubs are restricted in lateral dimensions, and surface energy is further minimized. We assess the electrical properties of the selectively grownGaAs nanostubs by fabricating heterogeneous p⁺–Si/n⁺–GaAs p–n diodes.

Copyright Statement

Copyright (2016) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 108(16), 163106 and may be found at doi: 10.1063/1.4947436

Publication Information

Chang, Yoon Jung; Simmonds, Paul J.; Beekley, Brett; Goorsky, Mark S.; and Woo, Jason C.S.. (2016). "Selective-Area Growth of Heavily n–Doped GaAs Nanostubs on Si(001) by Molecular Beam Epitaxy". Applied Physics Letters, 108(16), 163106-1 - 163106-5. http://dx.doi.org/10.1063/1.4947436