Adsorption-Controlled Growth of BiVO₄ by Molecular-Beam Epitaxy

Authors

D. A. Hillsberry, Boise State University
D. A. Tenne, Boise State UniversityFollow

Document Type

Article

Publication Date

10-2013

Abstract

Single-phase epitaxial films of the monoclinic polymorph of BiVO₄ were synthesized by reactive molecular-beam epitaxy under adsorption-controlled conditions. The BiVO₄ films were grown on (001) yttria-stabilized cubic zirconia (YSZ) substrates. Four-circle x-ray diffraction, scanning transmission electron microscopy (STEM), and Raman spectroscopy confirm the epitaxial growth of monoclinic BiVO₄ with an atomically abrupt interface and orientation relationship (001)_BiVO4 ∥ (001)_YSZ with [100]_BiVO4 ∥ [100]_YSZ. Spectroscopic ellipsometry, STEM electron energy loss spectroscopy (STEM-EELS), and x-ray absorption spectroscopy indicate that the films have a direct band gap of 2.5 ± 0.1 eV.

Copyright Statement

This document was originally published by AIP Publishing, LLC. in APL Materials. This work is provided under a Creative Commons Attribution License. Details regarding the use of this work can be found at: http://creativecommons.org/licenses/by/3.0/. Doi:10.1063/1.4824041.

Publication Information

Hillsberry, D. A. and Tenne, D. A.. (2013). "Adsorption-Controlled Growth of BiVO₄ by Molecular-Beam Epitaxy". APL Materials, 1(4), 042112-1 - 042112-8. http://dx.doi.org/10.1063/1.4824041