Document Type

Article

Publication Date

12-2021

Abstract

We have determined a reproducible set of growth conditions for the self-assembly of tensile-strained In1-xGaxAs quantum dot (QD) nanostructures on (111)A surfaces. During molecular beam epitaxy, In1-xGaxAs islands form spontaneously on InAs(111)A when the Ga content x ≥ 50%. We analyze the structure and composition of InGaAs/InAs(111) samples using atomic force microscopy, transmission electron microscopy, and electron energy loss spectroscopy. We demonstrate control over the size and areal density of the islands as a function of In1-xGaxAs coverage, In1-xGaxAs composition, and substrate temperature. We calculated the conduction and valence band energy values for these QDs in an InAs matrix. This work supports the efforts to establish InAs(111)A as a platform for future incorporation with other (111)-oriented materials from the 6.1 Å family of semiconductors.

Copyright Statement

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in

Vallejo, K.D., Garrett, T.A., Cabrera, C.I., Liang, B., Grossklaus, K.A., & Simmonds, P.J. (2021). Tensile-Strained Self-Assembly of InGaAs on InAs(111)A. Journal of Vacuum Science & Technology B, 39(6), 062809

and may be found at https://doi.org/10.1116/6.0001481.

Available for download on Thursday, December 01, 2022

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