Tensile-Strained Self-Assembly of InGaAs on InAs(111)A

Authors

Kevin D. Vallejo, Boise State University
Trent A. Garrett, Boise State University
Carlos I. Cabrera, Universidad Autónoma de Zacatecas
Baolai Liang, University of California Los Angeles
Kevin A. Grossklaus, Tufts University
Paul J. Simmonds, Boise State UniversityFollow

Document Type

Article

Publication Date

12-2021

Abstract

We have determined a reproducible set of growth conditions for the self-assembly of tensile-strained In_1-xGa_xAs quantum dot (QD) nanostructures on (111)A surfaces. During molecular beam epitaxy, In_1-xGa_xAs islands form spontaneously on InAs(111)A when the Ga content x ≥ 50%. We analyze the structure and composition of InGaAs/InAs(111) samples using atomic force microscopy, transmission electron microscopy, and electron energy loss spectroscopy. We demonstrate control over the size and areal density of the islands as a function of In_1-xGa_xAs coverage, In_1-xGa_xAs composition, and substrate temperature. We calculated the conduction and valence band energy values for these QDs in an InAs matrix. This work supports the efforts to establish InAs(111)A as a platform for future incorporation with other (111)-oriented materials from the 6.1 Å family of semiconductors.

Copyright Statement

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in

Vallejo, K.D., Garrett, T.A., Cabrera, C.I., Liang, B., Grossklaus, K.A., & Simmonds, P.J. (2021). Tensile-Strained Self-Assembly of InGaAs on InAs(111)A. Journal of Vacuum Science & Technology B, 39(6), 062809

and may be found at https://doi.org/10.1116/6.0001481.

Publication Information

Vallejo, Kevin D.; Garrett, Trent A.; Cabrera, Carlos I.; Liang, Baolai; Grossklaus, Kevin A.; and Simmonds, Paul J.. (2021). "Tensile-Strained Self-Assembly of InGaAs on InAs(111)A". Journal of Vacuum Science & Technology B, 39(6), 062809. https://doi.org/10.1116/6.0001481