Atomic Layer Deposition of Molybdenum Disulfide Films Using MoF₆ and H₂S

Authors

Steven Letourneau, Boise State University
Elton Graugnard, Boise State UniversityFollow

Document Type

Article

Publication Date

1-2018

Abstract

Molybdenum sulfide films were grown by atomic layer deposition on silicon and fused silica substrates using molybdenum hexafluoride (MoF₆) and hydrogen sulfide at 200 °C. In situ quartz crystal microbalance (QCM) measurements confirmed linear growth at 0.46 Å/cycle and self-limiting chemistry for both precursors. Analysis of the QCM step shapes indicated that MoS₂ is the reaction product, and this finding is supported by x-ray photoelectron spectroscopy measurements showing that Mo is predominantly in the Mo(IV) state. However, Raman spectroscopy and x-ray diffraction measurements failed to identify crystalline MoS₂ in the as-deposited films, and this might result from unreacted MoF_x residues in the films. Annealing the films at 350 °C in a hydrogen rich environment yielded crystalline MoS₂ and reduced the F concentration in the films. Optical transmission measurements yielded a bandgap of 1.3 eV. Finally, the authors observed that the MoS₂ growth per cycle was accelerated when a fraction of the MoF₆ pulses were substituted with diethyl zinc.

Comments

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Copyright Statement

Copyright (2018) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 36(1), 01A125 and may be found at doi: 10.1116/1.5003423

Publication Information

Letourneau, Steven and Graugnard, Elton. (2018). "Atomic Layer Deposition of Molybdenum Disulfide Films Using MoF₆ and H₂S". Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 36(1), 01A125-1 - 01A125-9. https://doi.org/10.1116/1.5003423