Abstract Title
Atomic Layer Deposition of Aluminum-Doped Zinc Oxide Characterized by in-situ Transmission Fourier-Transform Infrared Spectrometry
Abstract
An apparatus was constructed which allowed a Nicolet Magna 550 Fourier Transform Infrared Spectrometer (FTIR) to interface with an industrial Atomic Layer Deposition (ALD) furnace. Aluminum Zinc Oxide films were grown using ALD. The resulting films were characterized through in-situ FTIR. Significant noise was introduced by the method of interfacing the FTIR with the ALD furnace. The film produced little to no absorbance and the resulting signal showed no indication of chemical changes which could not be attributed to random noise. Guidelines to reduce noise and signal loss in future similar experiments were provided.
Atomic Layer Deposition of Aluminum-Doped Zinc Oxide Characterized by in-situ Transmission Fourier-Transform Infrared Spectrometry
An apparatus was constructed which allowed a Nicolet Magna 550 Fourier Transform Infrared Spectrometer (FTIR) to interface with an industrial Atomic Layer Deposition (ALD) furnace. Aluminum Zinc Oxide films were grown using ALD. The resulting films were characterized through in-situ FTIR. Significant noise was introduced by the method of interfacing the FTIR with the ALD furnace. The film produced little to no absorbance and the resulting signal showed no indication of chemical changes which could not be attributed to random noise. Guidelines to reduce noise and signal loss in future similar experiments were provided.