Advanced Scanning Probe Microscopy Characterization of Atomic Layer Deposited and Etched MoS2 Thin Films
Abstract
Because modern semiconductor device features are smaller than the diffraction limit of standard optical microscopes, higher resolution electron and scanning probe microscopies are routinely employed for device characterization. In particular, atomic force microscopy (AFM) and associated advanced scanning probe microscopy (SPM) techniques can map nanoscale surface topography and morphology as well as provide insight into electrical, magnetic, and mechanical properties. More recently, with the development of AFM-IR, AFM can be combined with infrared (IR) spectroscopy to provide chemical identification with ~10 nm resolution. Here we report AFM characterization of area selective atomic layer deposition (ASALD) and etching (ASALE) of molybdenum disulfide (MoS 2), a layered two-dimensional (2D) semiconductor that shows great promise due to its atomically thin structure and impressive electrical properties. High resolution AFM is used to characterize ALD film quality and ALE morphology, while advanced SPM modes are employed to measure electrical properties of interest. Additionally, AFM-IR is brought to bear to provide insight into the ALE mechanism and reaction products.
These results hold promise for advancing the characterization and integration of novel 2Dmaterials into semiconductor device manufacturing.
Advanced Scanning Probe Microscopy Characterization of Atomic Layer Deposited and Etched MoS2 Thin Films
Because modern semiconductor device features are smaller than the diffraction limit of standard optical microscopes, higher resolution electron and scanning probe microscopies are routinely employed for device characterization. In particular, atomic force microscopy (AFM) and associated advanced scanning probe microscopy (SPM) techniques can map nanoscale surface topography and morphology as well as provide insight into electrical, magnetic, and mechanical properties. More recently, with the development of AFM-IR, AFM can be combined with infrared (IR) spectroscopy to provide chemical identification with ~10 nm resolution. Here we report AFM characterization of area selective atomic layer deposition (ASALD) and etching (ASALE) of molybdenum disulfide (MoS 2), a layered two-dimensional (2D) semiconductor that shows great promise due to its atomically thin structure and impressive electrical properties. High resolution AFM is used to characterize ALD film quality and ALE morphology, while advanced SPM modes are employed to measure electrical properties of interest. Additionally, AFM-IR is brought to bear to provide insight into the ALE mechanism and reaction products.
These results hold promise for advancing the characterization and integration of novel 2Dmaterials into semiconductor device manufacturing.