Abstract Title
Using LT-Spice Circuit Modeling to Investigate the Effects of Changing the Metal-Selenide Layer in the Self-Directed Channel Memristor
Abstract
LT-spice simulations were performed for several self-directed channel (SDC) memristor device types that had been fabricated and electrically characterized in our research lab. The SDC devices differed by the type of metal (M) present in the M-Se layer (M=In, Sb, Sn, Ag, Pb, Zn). The current-voltage curves measured for each device type were measured using a sine wave input signal with variable frequency, and were then compared to the LT-spice simulated device response using the Yakopcic memristor model. Each device type required a change in the model parameters. By mapping the parameters changed, we hope to develop a better physical model of the SDC memristor device and an improved understanding of how the metal influences the device electrical response.
Using LT-Spice Circuit Modeling to Investigate the Effects of Changing the Metal-Selenide Layer in the Self-Directed Channel Memristor
LT-spice simulations were performed for several self-directed channel (SDC) memristor device types that had been fabricated and electrically characterized in our research lab. The SDC devices differed by the type of metal (M) present in the M-Se layer (M=In, Sb, Sn, Ag, Pb, Zn). The current-voltage curves measured for each device type were measured using a sine wave input signal with variable frequency, and were then compared to the LT-spice simulated device response using the Yakopcic memristor model. Each device type required a change in the model parameters. By mapping the parameters changed, we hope to develop a better physical model of the SDC memristor device and an improved understanding of how the metal influences the device electrical response.