The Effect of Sn Incorporation on the Material Properties of PECVD Deposited GeS2 Thin Films

Presentation Date

7-2015

Abstract

Incorporatoin of Sn into germanium chalcogenide films is known to increase the difference in electrical conductance between the amorphous and cryustalline phases of these films. The additon of Sn also has tthe potential to increase the magnitude of the resistive switching exhibited by conductive bridging RAM as well as to decrease the voltage required to cause the switching. With PECVD, plasma enchanced chemical vapor depositon, atomic percentages of SN, between 0.1% and 30% should be possible.

In this study, Sn was incorporated into germanium chalcogenide thin films via PECVD and was done utilizing GeCl4, H2S, SnCl4, and alkyl chalcogenides. The reactant flow rates and plasma powers were varied to deposit several thin films with varying Sn content. XRF( X-ray fluorescence), XRD (X-ray diffraction), EDS (energy dispersive x-ray spectroscopy), and Raman spectroscopy were used to determine the stoichiometries and crystallinity of the thin films that were deposited.

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The Effect of Sn Incorporation on the Material Properties of PECVD Deposited GeS2 Thin Films

Incorporatoin of Sn into germanium chalcogenide films is known to increase the difference in electrical conductance between the amorphous and cryustalline phases of these films. The additon of Sn also has tthe potential to increase the magnitude of the resistive switching exhibited by conductive bridging RAM as well as to decrease the voltage required to cause the switching. With PECVD, plasma enchanced chemical vapor depositon, atomic percentages of SN, between 0.1% and 30% should be possible.

In this study, Sn was incorporated into germanium chalcogenide thin films via PECVD and was done utilizing GeCl4, H2S, SnCl4, and alkyl chalcogenides. The reactant flow rates and plasma powers were varied to deposit several thin films with varying Sn content. XRF( X-ray fluorescence), XRD (X-ray diffraction), EDS (energy dispersive x-ray spectroscopy), and Raman spectroscopy were used to determine the stoichiometries and crystallinity of the thin films that were deposited.