Gated Silicon Field Emitter Array Characterization
Arrays of silicon (Si) field emitter tips are being studied for use as electron source for vacuum nano-transistors. These arrays are analyzed using the CST particle tracking solver and via experiment. Simulations are used to study the potential transfer characteristics and performance for use as transistors for the vertical emitter structures. An experimental system has been developed to test the arrays under high temperature (400° C) and for various gases to study the noise characteristics and the effects of adsorption and desorption on performance.
Bhattacharya, Ranajoy; Karaulac, Nedeljko; Chem, Winston; Akinwande, Akintunde I.; and Browning, Jim. (2020). "Gated Silicon Field Emitter Array Characterization". 2020 IEEE 21st International Conference on Vacuum Electronics (IVEC), 7-8. https://doi.org/10.1109/IVEC45766.2020.9520491