Complementary Vacuum Field Emission Transistor
Document Type
Article
Publication Date
10-2021
Abstract
A complementary vacuum field emission device structure is proposed, and its operation is analyzed by multiphysics simulation. A freely moving double-clamped cantilever, which balances the electrostatic attraction force and elastic restoration force, is used as the source electrode while the drain electrode is fixed. The electron-emitting cathode is formed on the source for the n-type device and on the drain for the p-type. Thus, complementary current–voltage characteristics are obtained only with Fowler–Nordheim tunneling electron transport. The impact of various design parameters such as vacuum gap, cantilever beam thickness, gate width, and tip offset on the drain and gate leakage currents is investigated. Inverter logic operation is verified successfully using complementary devices.
Publication Information
Bhattacharya, Ranajoy; Han, Jin-Woo; Browning, Jim; and Meyyappan, M.. (2021). "Complementary Vacuum Field Emission Transistor". IEEE Transactions on Electron Devices, 68(10), 5244-5249. https://doi.org/10.1109/TED.2021.3106868