Resistance State Locking in CBRAM Cells Due to Displacement Damage Effects

Authors

M. Mitkova, Boise State UniversityFollow

Document Type

Article

Publication Date

8-2017

DOI

http://dx.doi.org/10.1109/TNS.2017.2666147

Abstract

Two different displacement damage experiments were performed on CBRAM cells. In one experiment, conductive bridging random access memory (CBRAM) cells were exposed to 14 MeV neutrons to a total fluence of 3.19 × 10¹³ n/cm². In the second test, CBRAM cells were bombarded with 200 keV Si²⁺ ions. In both the experiments, the high resistance and low resistance states (LRSs) of the cells were observed to converge with increasing particle fluence. After reaching a 14 MeV neutron fluence of 2.93 × 10¹³ n/cm², the CBRAM cells became irrecoverably locked into their final resistance state. In situ testing during heavy ion exposure showed a steady decrease in the resistance state of each cell with each successive exposure to the beam. The devices eventually became locked in an LRS.

Comments

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Publication Information

Mitkova, M.. (2017). "Resistance State Locking in CBRAM Cells Due to Displacement Damage Effects". IEEE Transactions on Nuclear Science, 64(8), 2300-2306.