A Comparative Study on TID Influenced Lateral Diffusion of Group 11 Metals into Ge_xS_1−x and Ge_xSe_1−x Systems: A Flexible Radiation Sensor Development Perspective

Authors

M. Mitkova, Boise State UniversityFollow

Document Type

Article

Publication Date

8-2017

DOI

http://dx.doi.org/10.1109/TNS.2017.2684782

Abstract

The impact of varying: 1) metals used to form contact electrodes and 2) chalcogenide glass atomic ratio/chemical composition on the performance of our recently developed flexible radiation detection sensors has been investigated. For electrodes, three group 11 elements (i.e., copper, silver, and gold) were used. For chalcogenide glass film, either Ge_xS_1-x or Ge_xSe_1-x was used where the atomic ratio of the chalcogen atoms (i.e., sulfide or selenide) was varied from device to device. Selenide systems with Ag electrodes were found to be very promising, since the limit of detection of the sensors showed clear dependence on the Se atomic ratio in the chalcogenide glass film. The other selenide and sulfide systems with different group 11 metal electrodes were not as suitable for the present lateral diffusion-based design due to either their control instability or very slow diffusion caused by γ irradiation from a ⁶⁰Co source.

Comments

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Publication Information

Mitkova, M.. (2017). "A Comparative Study on TID Influenced Lateral Diffusion of Group 11 Metals into Ge_xS_1−x and Ge_xSe_1−x Systems: A Flexible Radiation Sensor Development Perspective". IEEE Transactions on Nuclear Science, 64(8), 2292-2299.