Radiation Hardening by Process of CBRAM Resistance Switching Cells

Document Type

Article

Publication Date

8-2016

DOI

http://dx.doi.org/10.1109/TNS.2016.2569076

Abstract

Non-volatile memory (NVM) technology highly resistant to ionizing dose and radiation effects in general continues to be a challenge for space missions. Novel NVM nano-ionic technologies known as conductive bridging random access memory (CBRAM), a resistive circuit technology, exhibits great promise for both high density memory and high total ionizing dose resilience. In this work, it is discovered that CBRAM can be sensitive to high TID levels. However, this novel technology can be radiation-hardened by process, which is demonstrated in this paper.

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