Leakage Current Recovery in SRAM After AC Stressing
Document Type
Conference Proceeding
Publication Date
2003
DOI
http://dx.doi.org/10.1109/IRWS.2003.1283303
Abstract
A recovery of sub-threshold current, measured as standby current has been seen on Static Random Access Memory (SRAM) devices after AC stress. A theoretical model is presented to explain the observed data in this paper. A trapped charge model is proposed for decrease in subthreshold current leading to lower observed standby current on continuous negative unipolar write stress. Several mechanisms have been proposed earlier such as Poole-Frenkel enhanced emission from traps, trap assisted tunneling, and band-to band tunneling to explain possible source of off current [5,9].
Publication Information
Payan, Cesar; Kumar, Santosh; Thupil, Ajit; Kasichainula, Sridhar; and Knowlton, William B.. (2003). "Leakage Current Recovery in SRAM After AC Stressing". 2003 IEEE International Integrated Reliability Workshop Final Report, 67-70.