Reconfigurable Memristive Device Technologies

Document Type

Article

Publication Date

7-2015

DOI

http://dx.doi.org/10.1109/JPROC.2015.2441752

Abstract

In this paper, we present a review of the state of the art in memristor technologies. Along with ionic conducting devices [i.e., conductive bridging random access memory (CBRAM)], we include phase change, and organic/organo–metallic technologies, and we review the most recent advances in oxidebased memristor technologies. We present progress on 3-D integration techniques, and we discuss the behavior of more mature memristive technologies in extreme environments.

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