Structural Details of Ge-Rich and Silver-Doped Chalcogenide Glasses for Nanoionic Nonvolatile Memory

Authors

Maria I. Mitkova, Boise State UniversityFollow
Yoshifumi Sakaguchi, Boise State UniversityFollow
Dmitri A. Tenne, Boise State UniversityFollow
Shekhar Kumar Bhagat, Arizona State University
Terry L. Alford, Arizona State University

Document Type

Article

Publication Date

3-1-2010

DOI

http://dx.doi.org/10.1002/pssa.200982902

Abstract

We are reporting our results of Raman and X-ray diffraction (XRD) studies on amorphous Ge₄₆S₅₄ thin films and the films after silver photodiffusion. Based on the Raman scattering studies, a structural model for amorphous Ge₄₆S₅₄ is suggested including the formation of single Ge–S chains with a vibrational mode at 410 cm⁻¹. The result of XRD measurement indicates that there exists a medium-range order with about 6 Å´ even at such Ge-rich composition. After the introduction of silver, the medium-range order is lost and there was a change in the diffraction curve indicative of the change in the local atomic order. The experimental results are explained in terms of our structural model, in connection with the application for fast switching memory devices.

Publication Information

Mitkova, Maria I.; Sakaguchi, Yoshifumi; Tenne, Dmitri A.; Bhagat, Shekhar Kumar; and Alford, Terry L.. (2010). "Structural Details of Ge-Rich and Silver-Doped Chalcogenide Glasses for Nanoionic Nonvolatile Memory". Physica Status Solidi (A), 207(3), 621–626.