Electrical Switching Studies of Chalcogenide-Based Ion-Conducting Variable Resistance Devices

Author

Beth Rose Cook, Boise State UniversityFollow

Publication Date

5-2011

Type of Culminating Activity

Thesis

Degree Title

Master of Science in Electrical Engineering

Department

Electrical and Computer Engineering

Major Advisor

Kristy A. Campbell, Ph.D.

Abstract

In this work, ion-conducting devices using layers of chalcogenide materials are explored as potential non-volatile memory devices. This technology is also known in the literature as conductively bridged RAM (CBRAM), programmable metallization cell (PMC), and programmable conductor RAM (PCRAM; not to be confused with the acronym PCRAM as used to denote phase-change memory).

Electrical measurements with five different programming currents at four temperatures have been performed on two-terminal devices comprised of silver with a metal-selenide and germanium-chalcogenide layer. The metal-selenide layer is Sb₂Se₃, SnSe, PbSe, In₂Se₃, or Ag₂Se. The germanium-chalcogenide layer is either Ge₂Se₃ or GeTe. Total ionizing dose radiation effects are also investigated for GeTe/SnSe/Ag and Ge₂Se₃/SnSe/Ag devices.

Recommended Citation

Cook, Beth Rose, "Electrical Switching Studies of Chalcogenide-Based Ion-Conducting Variable Resistance Devices" (2011). Boise State University Theses and Dissertations. 193.
https://scholarworks.boisestate.edu/td/193