Document Type

Conference Proceeding

Publication Date

2015

Abstract

A 4-level pulse amplitude modulation (PAM-4) silicon photonic transmitter targeting operation at 25 Gb/s is designed using an electrical-photonic co-design methodology. The prototype consists of an electrical circuit and a photonics circuit, which were designed in 130 nm IBM SiGe BiCMOS process and 130nm IME SOI CMOS process, respectively. Then the two parts will be interfaced via side-by-side wire bonding. The electrical die mainly includes a 12.5 GHz PLL, a full-rate 4- channel uncorrelated 27 − 1 pseudo-random binary sequence (PRBS) generator and CML drivers. The photonics die is a 2-segment Mach-Zehnder modulator (MZM) silicon photonics device with thermal tuning feature for PAM-4. Verilog-A model for the MZM entails the system simulation for optical devices together with electrical circuitry using custom IC design tools. A full-rate 4-channel uncorrelated PRBS design using transition matrix method is detailed, in which any two of the 4-channels can be used for providing random binary sequence to drive the two segments of the MZM to generate the PAM-4 signal.

Copyright Statement

© 2015, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. doi: 10.1109/MWSCAS.2015.7282203

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