2026 Undergraduate Research Showcase

Implementation of a Custom Controlled-Atmosphere Glovebox for Air-Sensitive Atomic Layer Deposition of Ultra-High-k Dielectrics

Document Type

Student Presentation

Presentation Date

4-24-2026

Faculty Sponsor

Dr. Scott Riley, Aenakshi Sircar, Dr. Steven Hues, and Dr. Elton Graugnard

Abstract

Ultra-high-k dielectrics, such as barium titanate, are essential for next-generation semiconductor applications due to their high relative permittivity. However, the synthesis of these materials via Atomic Layer Deposition (ALD) is complicated by the sensitivity of barium-based precursors to ambient moisture and oxygen. Exposure can lead to the formation of barium hydroxide, which causes a significant loss in dielectric performance and structural integrity. To address this challenge, a custom polycarbonate glovebox was engineered to interface directly with an Arradiance ALD system. The project involved refurbishing an existing enclosure, integrating a specialized transfer chamber, and installing oxygen and moisture sensors to maintain a controlled inert environment. Leak testing and sensor validation confirmed that the system successfully achieves and maintains the stable, low-oxygen conditions required for thin-film stability. This integrated system allows for the protected transfer of samples between vacuum systems and secondary environments without atmospheric exposure, minimizing contamination during critical handling steps and improving the reliability of ultra-high-k dielectric film processing.

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