Investigation of the Conduction Mechanisms in the Ag- and Cu-Based Self-Directed Channel (SDC) Memristor

Document Type

Student Presentation

Presentation Date



College of Engineering


Department of Electrical & Computer Engineering

Faculty Sponsor

Dr. Kristy A. Campbell


A memristor is a two-terminal device that is considered the fourth basic circuit element. Memristors are currently actively researched as a potential device solution for enabling analog non-volatile memory, neuromorphic circuits, and analog computing. It has been proposed that the self-directed channel (SDC) memristor is a type of two-terminal ion-conducting memristive device which uses an in-situ chemical reaction in the active material to create a permanent, non-conductive channel that bridges the active layer. This channel allows Ag+ or Cu+ ion migration when a potential is applied across the device in order to change the device conductivity. In this work, we study the conduction mechanisms of the Ag and Cu-based SDC device types over the temperature range of 5 K to 350 K. This data will assist in developing a compact model that can be used in circuit designs that employ the SDC memristor.


* This work was partially supported by the National Science Foundation, grant no. CCF-1320987

United States Air Force Office of Scientific Research, DEPSCoR No. FA9550-07-1-0546

United States Air Force Research Laboratory, No. FA9453-08-2-0252

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