Title

Design and Modeling of Device Characteristics and Process of a 0.13 μm Silicon-on-Insulator MOSFET for High Performance

Publication Date

3-2001

Type of Culminating Activity

Thesis

Degree Title

Master of Science in Engineering, Electrical Engineering

Department

Electrical and Computer Engineering

Major Advisor

Dr. Steve Parke

Abstract

As the need for VLSI circuits with high speed and low power increases the necessity for technologies is leading to new research on devices that can reliably meet these stringent requirements. Silicon-on-Insulator, or SOI, requires low power for high drive current and speed. Although possessing many process and device advantages over bulk technologies, SOI devices are not widely understood. This text begins by introducing the device physics, fully and partially depleted device descriptions, and advantages of SOI. To meet with current a future demand, a 0.13μm SOI MOSFET process was designed and simulated. The resulting device is characterized by simulation, also.

A novel idea to increase drain current without increasing gate or drain potential is explored. Because of the silicon film is completely surrounded by oxide, which has low thermal conductivity, heat quickly build in the drain region. By adding a path for excess heat to dissipate from the drain region, mobility is increased and drain current will be demonstrated to increase over 30%. The extra process steps and device design and considerations will me covered, also. Several designs of heat sinks are presented and characterized. A novel design of adding a heat sink below shallow trench isolation proves very effective in heat dissipation.

Dynamic threshold SOI devices provide improvements to standard SOI technology. By tying the gate to the substrate, high current and low threshold voltage is achieved in the on state. High threshold voltage in the off state leads to low leakage. DTMOSFETs are very complex three dimensional devices. Methods to model them in a two dimensional simulator are discussed, as well as the resulting device. A large increase in drive was achieved. A near ideal sub threshold swing is also realized.

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