Publication Date


Type of Culminating Activity


Degree Title

Master of Science in Electrical Engineering


Electrical and Computer Engineering

Major Advisor

Kristy A. Campbell, Ph.D.


Electron storage memory devices are approaching the minimum dimensions that are physically possible due to the onward march of Moore’s law. To continue to enable the increased memory densities needed for today’s applications, especially low power and size constrained mobile devices, new memory solutions are needed. Several candidates are emerging in this space. Metal ion-conducting memory devices are being investigated due to excellent scalability, speed, and low power. These devices are part of a memory class called resistive memory. In the literature, they are referred to as CBRAM (conductive bridge random access memory), PMC (programmable metallization cell), ECM (electrochemical metallization cell), and Atomic Switch.

This work seeks to understand the ion-conduction mechanisms that are occurring in switching devices comprised of W/Ge32Se68/Ag, bottom to top, called Ag-only throughout, and in switching devices comprised of W/Ge32Se68/SnSe/Ag/W, bottom to top, called Ag+SnSe throughout. Additionally, the electron-conduction mechanisms in the Ge32Se68 memory layer are investigated using devices comprised of W/Ge32Se68/W. The experimental method used to analyze the devices was DC voltage sweep across multiple temperatures over the range of 300 K to 10 K.