Publication Date

5-2025

Date of Final Oral Examination (Defense)

12-16-2024

Type of Culminating Activity

Dissertation

Degree Title

Doctor of Philosophy in Electrical and Computer Engineering

Department

Electrical and Computer Engineering

Supervisory Committee Chair

Kris Campbell, Ph.D.

Supervisory Committee Member

Thad Welch, Ph.D.

Supervisory Committee Member

Kurtis Cantley, Ph.D.

Abstract

The self-directed channel (SDC) memristor consists of layers of Ge40Se60 (active layer), SnSe, and Ag, which operate together to produce a memristive device that is stable at high operating temperatures, capable of cycling over 1 billion times, has a fast switching, and has low power consumption. This research explored whether altering the device materials could influence the SDC electrical performance. That was investigated by changing the chemical constituents in the individual material layers (chalcogenide atoms O, S, Se, and Te in the Ge-Ch (active layer), chalcogenide stoichiometry in the Ge-Ch (active layer), and finally, the chalcogenide in the Sn-Ch (metal chalcogenide layer), which can be measured by measuring the resulting changes in electrical performance. Also, the effect of altering the device materials on the electrical conduction in amorphous materials, including (Fowler-Nordheim Tunneling, Schottky emission, Mott-Gurney Hopping, Space Charge-Limited, and Poole Frenkel), was explored, and the differences in the electrical behavior for each material change were quantified.

Additionally, the investigation included determining the device conductivity within the low resistance state operation mode and calculating the area under the hysteresis loop under the influence of a continuous-wave (CW) input signal.

DOI

https://doi.org/10.18122/td.2353.boisestate

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