Single-Photon Generation from Self-Assembled GaAs/InAlAs(111)A Quantum Dots with Ultrasmall Fine-Structure Splitting

Authors

Christopher F. Schuck, Boise State University
Robert Boutelle, National Institute of Standards and Technology
Kevin Silverman, National Institute of Standards and Technology
Galan Moody, University of California, Santa Barbara
Paul J. Simmonds, Boise State UniversityFollow

Document Type

Article

Publication Date

4-2021

Abstract

We present a novel semiconductor single-photon source based on tensile-strained (111)-oriented GaAs/InAlAs quantum dots (QDs) exhibiting ultrasmall exciton fine-structure splitting (FSS) of ≤ 8 µeV. Using low-temperature micro-photoluminescence spectroscopy, we identify the biexciton-exciton radiative cascade from individual QDs, which, combined with small FSS, indicates these self-assembled GaAs(111) QDs are excellent candidates for polarization-entangled photon-pair generation.

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

Publication Information

Schuck, Christopher F.; Boutelle, Robert; Silverman, Kevin; Moody, Galan; and Simmonds, Paul J.. (2021). "Single-Photon Generation from Self-Assembled GaAs/InAlAs(111)A Quantum Dots with Ultrasmall Fine-Structure Splitting". Journal of Physics: Photonics, 3(2), 024012-1 - 024012-7. https://doi.org/10.1088/2515-7647/abf24e