Ferroelectricity in Ultrathin Strained BaTiO₃ Films: Probing the Size Effect by Ultraviolet Raman Spectroscopy

Authors

Dmitri Tenne, Boise State UniversityFollow
P. Turner, Boise State UniversityFollow
J. D. Schmidt, Boise State University
M. Biegalski, Pennsylvania State University, University Park
Y. L. Li, Pennsylvania State University, University Park
L. Q. Chen, Pennsylvania State University, University Park
A. Soukiassian, Pennsylvania State University, University Park

Document Type

Article

Publication Date

2009

Abstract

We demonstrate a dramatic effect of film thickness on the ferroelectric phase transition temperature, T_c, in strained BaTiO3 films grown on SrTiO3 substrates. Using variable temperature ultraviolet Raman spectroscopy enables measuring T_c in films as thin as 1.6 nm, and film thickness variation from 1.6 to 10 nm leads to T_c tuning from 70 to about 925K. Raman data are consistent with synchrotron x-ray scattering results, which indicate the presence of of 180^◦ domains below T_c, and thermodynamic phase-field model calculations of T_c as a function of thickness.

Copyright Statement

This is an author-produced, peer-reviewed version of this article. The final, definitive version of this document can be found online at Physical Review Letters, published by American Physical Society. Copyright restrictions may apply. DOI: 10.1103/PhysRevLett.103.177601

Publication Information

Tenne, Dmitri; Turner, P.; Schmidt, J. D.; Biegalski, M.; Li, Y. L.; Chen, L. Q.; and Soukiassian, A.. (2009). "Ferroelectricity in Ultrathin Strained BaTiO₃ Films: Probing the Size Effect by Ultraviolet Raman Spectroscopy". Physical Review Letters, 103(17), . http://dx.doi.org/10.1103/PhysRevLett.103.177601