Document Type

Article

Publication Date

2009

DOI

http://dx.doi.org/10.1103/PhysRevLett.103.177601

Abstract

We demonstrate a dramatic effect of film thickness on the ferroelectric phase transition temperature, Tc, in strained BaTiO3 films grown on SrTiO3 substrates. Using variable temperature ultraviolet Raman spectroscopy enables measuring Tc in films as thin as 1.6 nm, and film thickness variation from 1.6 to 10 nm leads to Tc tuning from 70 to about 925K. Raman data are consistent with synchrotron x-ray scattering results, which indicate the presence of of 180 domains below Tc, and thermodynamic phase-field model calculations of Tc as a function of thickness.

Copyright Statement

This is an author-produced, peer-reviewed version of this article. The final, definitive version of this document can be found online at Physical Review Letters, published by American Physical Society. Copyright restrictions may apply. DOI: 10.1103/PhysRevLett.103.177601

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