The need for advanced energy conversion and storage devices remains a critical challenge amid the growing worldwide demand for renewable energy. Metal fluoride thin films are of great interest for applications in lithium-ion and emerging rechargeable battery technologies, particularly for enhancing the stability of the electrode-electrolyte interface and thereby extending battery cyclability and lifetime. Reported within, sodium fluoride (NaF) thin films were synthesized via atomic layer deposition (ALD). NaF growth experiments were carried out at reactor temperatures between 175 and 250 °C using sodium tert-butoxide and HF-pyridine solution. The optimal deposition temperature range was 175–200 °C, and the resulting NaF films exhibited low roughness (Rq ≈ 1.6 nm for films of ~8.5 nm), nearly stoichiometric composition (Na:F = 1:1.05), and a growth per cycle value of 0.85 Å/cycle on SiO2substrates. These results are encouraging for future applications of NaF thin films in the development of improved energy capture and storage technologies.
This is the author produced peer-reviewed version of this article and may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in:
Kuraitis, S.; Kang, D.; Mane, A.U.; Zhou, H.; Soares, J.; Elam, J.W.; and Graugnard, E. (2021). Atomic layer deposition of sodium fluoride thin films. Journal of Vacuum Science & Technology A, 39(3), 032405. https://doi.org/10.1116/6.0000847
and may be found at https://doi.org/10.1116/6.0000847.
Kuraitis, Sara; Kang, Donghyeon; Mane, Anil U.; Zhou, Hua; Soares, Jake; Elam, Jeffrey W.; and Graugnard, Elton. (2021). "Atomic Layer Deposition of Sodium Fluoride Thin Films". Journal of Vacuum Science & Technology A, 39(3), 032405-1 - 032405-7. https://doi.org/10.1116/6.0000847