Residual Stress in Ni-Mn-Ga Thin Films Deposited on Different Substrates

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Four series of Ni51.4Mn28.3Ga20.3/substrate thin film composites, where the substrate is either Si(100), MgO(100), alumina or Mo foil, and two series of Ni53.5Mn23.8Ga22.7/substrate composites where the substrate is either alumina or Mo foil, with different film thicknesses varying from 0.1 to 5 μm have been studied in the cubic phase by XRD stress measurements. The values of residual stresses are found to be dependent on both substrate and film thickness. In the submicron range, a correlation between thickness dependencies of residual stress and transformation temperatures is experimentally obtained. The temperature dependence of the d-spacing d220 is studied for the films deposited on Si(100).