The authors have established a robust set of growth conditions for homoepitaxy of high-quality InAs with a (111)A crystallographic orientation by molecular beam epitaxy (MBE). By tuning the substrate temperature, the authors obtain a transition from a 2D island growth mode to step-flow growth. Optimized MBE parameters (substrate temperature = 500 °C, growth rate = 0.12ML/s, and V/III ratio ≥ 40) lead to the growth of extremely smooth InAs(111)A films, free from hillocks and other 3D surface imperfections. The authors see a correlation between InAs surface smoothness and optical quality, as measured by photoluminescence spectroscopy. This work establishes InAs(111)A as a platform for future research into other materials from the 6.1 Å family of semiconductors grown with a (111) orientation.
Copyright 2019. American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in:
Vallejo, K.D.; Garrett, T.A.; Sautter, K.E.; Saythavy, K.; Liang, B.; & Simmonds, P.J. (2019). InAs(111)A Homoepitaxy with Molecular Beam Epitaxy. Journal of Vacuum Science & Technology B, 37(6), 061810.
and may be found at doi: 10.1116/1.5127857
Vallejo, Kevin D.; Garrett, Trent A.; Sautter, Kathryn E.; Saythavy, Kevin; Liang, Baolai; and Simmonds, Paul J.. (2019). "InAs(111)A Homoepitaxy with Molecular Beam Epitaxy". Journal of Vacuum Science & Technology B, 37(6), 061810-1 - 061810-4. https://dx.doi.org/10.1116/1.5127857