The authors report on a comprehensive study of the growth of coherently strained GaAs quantum dots (QDs) on (111) surfaces via the Stranski–Krastanov (SK) self-assembly mechanism. Recent reports indicate that the long-standing challenges, whereby the SK growth mechanism could not be used to synthesize QDs on (111) surfaces, or QDs under tensile strain, have been overcome. However, a systematic study of the SK growth of (111)-oriented, tensile-strained QDs (TSQDs) as a function of molecular beam epitaxy growth parameters is still needed. Here, the authors explore the effects of deposition amount, substrate temperature, growth rate, and V/III flux ratio on the SK-driven self-assembly of GaAs(111)A TSQDs. The authors highlight aspects of TSQD SK self-assembly on (111) surfaces that appear to differ from the SK growth of traditional compressively strained QDs on (100) surfaces. The unique properties of (111) QDs and tensile-strained QDs mean that they are of interest for various research areas. The results discussed here offer a practical guide for tailoring the size, shape, density, uniformity, and photon emission wavelength and intensity of (111) TSQDs for future applications.
Copyright (2018) American Institute of Physics on behalf of AVS - Science and Technology of Materials, Interfaces, and Processing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in:
Schuck, C. F., McCown, R. A., Hush, A., Mello, A., Roy, S., Spinuzzi, J. W., . . . Simmonds, P. J. (2018). Self-Assembly of (111)-Oriented Tensile-Strained Quantum Dots by Molecular Beam Epitaxy. Journal of Vacuum Science & Technology B, 36(3), 031803
and may be found at doi: 10.1116/1.5018002
Schuck, Christopher F.; McCown, Robin A.; Hush, Ashlie; Mello, Austin; Roy, Simon; Spinuzzi, Joseph W.; and Simmonds, Paul J.. (2018). "Self-Assembly of (111)-Oriented Tensile-Strained Quantum Dots by Molecular Beam Epitaxy". Journal of Vacuum Science & Technology B, 36(3), 031803-1 - 031803-9. http://dx.doi.org/10.1116/1.5018002
Available for download on Wednesday, May 01, 2019