Abstract Title
Atomic Layer Deposition of Germanium Sulfide and Tin Sulfide Thin Films
Additional Funding Sources
This project was supported by NSF-S-STEM: CHE-145829 and S-STEM: CHE-0965939 Idaho State University Career Path Internship Program.
Abstract
Atomic Layer Deposition of Germanium Sulfide and Tin Sulfide Thin Films
Ben Poulter, Seth Helsley, and Rene Rodriguez. Department of Chemistry, Idaho State University, Pocatello, ID 83209
GeS films are used throughout the semiconductor industry and are generally deposited by chemical vapor deposition. Atomic layer deposition is another form of deposition that is becoming used in the semiconductor industry. ALD allows for precise control over film stoichiometry and film thickness whereas chemical vapor deposition does not, especially regarding thin film depositions.
A cold-wall ALD reactor was used to deposit and GeSx and SnSx films. GeCl4 and SnCl4 vapors and H2S were pulsed sequentially with Ar purging cycles between each pulse. An RF plasma was applied during cycles to aid in deposition. Pressure, temperature, and plasma power were kept constant between depositions, 200mTorr, 150 C, and 20W respectively. The resulting films were characterized by scanning electron microscope, energy dispersive x-ray spectroscopy, and x-ray diffraction. Current work includes developing better masking techniques due to inconsistent masking in the past as well as substituting new precursors for Ge and Sn such as Ge amidinate and Ge acac in the ALD depositions.
Atomic Layer Deposition of Germanium Sulfide and Tin Sulfide Thin Films
Atomic Layer Deposition of Germanium Sulfide and Tin Sulfide Thin Films
Ben Poulter, Seth Helsley, and Rene Rodriguez. Department of Chemistry, Idaho State University, Pocatello, ID 83209
GeS films are used throughout the semiconductor industry and are generally deposited by chemical vapor deposition. Atomic layer deposition is another form of deposition that is becoming used in the semiconductor industry. ALD allows for precise control over film stoichiometry and film thickness whereas chemical vapor deposition does not, especially regarding thin film depositions.
A cold-wall ALD reactor was used to deposit and GeSx and SnSx films. GeCl4 and SnCl4 vapors and H2S were pulsed sequentially with Ar purging cycles between each pulse. An RF plasma was applied during cycles to aid in deposition. Pressure, temperature, and plasma power were kept constant between depositions, 200mTorr, 150 C, and 20W respectively. The resulting films were characterized by scanning electron microscope, energy dispersive x-ray spectroscopy, and x-ray diffraction. Current work includes developing better masking techniques due to inconsistent masking in the past as well as substituting new precursors for Ge and Sn such as Ge amidinate and Ge acac in the ALD depositions.
Comments
W57