Silver Chalcogenide Based Memristor Devices

Authors

Antonio S. Oblea, Boise State University
Achyut Timilsina, Boise State University
David Moore, Boise State University
Kristy A. Campbell, Boise State UniversityFollow

Document Type

Conference Proceeding

Publication Date

10-14-2010

DOI

http://dx.doi.org/10.1109/IJCNN.2010.5596775

Abstract

We have fabricated two-terminal chalcogenide-based devices containing Ge₂Se₃ and Ag that function as memristors. These devices have been electrically characterized at room temperature using quasi-static DC methods, AC sinusoidal methods, and AC pulse testing methods. In all cases, the devices exhibit memristive behavior.

Copyright Statement

©2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. DOI: 10.1109/IJCNN.2010.5596775

Publication Information

Oblea, Antonio S.; Timilsina, Achyut; Moore, David; and Campbell, Kristy A.. (2010). "Silver Chalcogenide Based Memristor Devices". 2010 International Joint Conference on Neural Networks (IJCNN), 1-3.