This paper presents the design of a fully differential sigma-delta temperature sensor using Schottky diode-based current references as a replacement for the traditional PN junction diode-based current references. This sensor was designed using the AMI 0.5um process through the MOSIS fabrication organization[l], and the chip performance will be evaluated and compared to the simulated results. The use of the Schottky diode and differential current sensing in the sigma-delta-type sensor allows for lower voltage operation and better noise performance.
This document was originally published by IEEE in IEEE Workshop on Microelectronics and Electron Devices. Copyright restrictions may apply. DOI: 10.1109/WMED.2008.4510657
Cahoon, Curtis and Baker, R. Jacob. (2008). "Low-Voltage CMOS Temperature Sensor Design Using Schottky Diode-Based References". IEEE Workshop on Microelectronics and Electron Devices, 16-19. http://dx.doi.org/10.1109/WMED.2008.4510657