In this work a scheme for fabricating a conductive bridge non-volatile memory arrays, using ion bombardment through a mask, is demonstrated. Blanket films and devices have been created to study the structural changes, surface roughness and device performance. Ar+ ions interaction on thin films of GexSe1−x system have been studied using Raman Spectroscopy, Atomic Force Microscopy (AFM) and Energy Dispersive X-Ray Spectroscopy (EDS). The performance of the memory devices has been analyzed based on the formation of vias and damage accumulation due to Ar+ ion interactions with GexSe1−x(x=0.25, 0.3 and 0.4) thin films of chalcogenide glasses (ChG). This method of devices/arrays fabrication provides a unique alternative to conventional photolithography for prototyping redox conductive bridge memory without involving any wet chemistry.
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Latif, M. R.; Nichol, T. L.; Mitkova, M.; Tenne, D. A.; Csarnovics, I.; Kokenyesi, S.; and Csik, A.. (2014). "Ion Beam Effect on Ge-Se Chalcogenide Glass Films: Non-Volatile Memory Array Formation, Structural Changes and Device Performance". 2014 IEEE Workshop On Microelectronics And Electron Devices (WMED), 1-4. http://dx.doi.org/10.1109/WMED.2014.6818720