In this work a scheme for fabricating a conductive bridge non-volatile memory arrays, using ion bombardment through a mask, is demonstrated. Blanket films and devices have been created to study the structural changes, surface roughness and device performance. Ar+ ions interaction on thin films of GexSe1−x system have been studied using Raman Spectroscopy, Atomic Force Microscopy (AFM) and Energy Dispersive X-Ray Spectroscopy (EDS). The performance of the memory devices has been analyzed based on the formation of vias and damage accumulation due to Ar+ ion interactions with GexSe1−x(x=0.25, 0.3 and 0.4) thin films of chalcogenide glasses (ChG). This method of devices/arrays fabrication provides a unique alternative to conventional photolithography for prototyping redox conductive bridge memory without involving any wet chemistry.
© 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. doi: 10.1109/WMED.2014.6818720
Latif, M. R.; Nichol, T. L.; Mitkova, M.; Tenne, D. A.; Csarnovics, I.; Kokenyesi, S.; and Csik, A.. (2014). "Ion Beam Effect on Ge-Se Chalcogenide Glass Films: Non-Volatile Memory Array Formation, Structural Changes and Device Performance". 2014 IEEE Workshop On Microelectronics And Electron Devices (WMED), 1-4.