A sensing circuit is presented for a portable/handheld semiconductor based radiation sensor, which senses low current changes without the inclusion of transistor noise issues. This circuit design block was implemented using supporting circuit architectures to enable sensing between 33pA to 1nA using low voltages. Additionally, a unique circuit topology is presented by which the effect of radiation damage to the silicon substrate and any devices on the substrate is reduced.
© 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. doi: 10.1109/WMED.2014.6818723
Ailavajhala, M. S.; Latif, M. R.; and Mitkova, M.. (2014). "Low-Current Sensing Circuit and Topology for Portable Gamma Radiation Sensor". 2014 IEEE Workshop On Microelectronics And Electron Devices (WMED), 1-4. http://dx.doi.org/10.1109/WMED.2014.6818723