Date of Final Oral Examination (Defense)
Type of Culminating Activity
Master of Science in Electrical Engineering
Electrical and Computer Engineering
Kristy A. Campbell, Ph.D.
In this work, ion-conducting devices using layers of chalcogenide materials are explored as potential non-volatile memory devices. This technology is also known in the literature as conductively bridged RAM (CBRAM), programmable metallization cell (PMC), and programmable conductor RAM (PCRAM; not to be confused with the acronym PCRAM as used to denote phase-change memory).
Electrical measurements with five different programming currents at four temperatures have been performed on two-terminal devices comprised of silver with a metal-selenide and germanium-chalcogenide layer. The metal-selenide layer is Sb2Se3, SnSe, PbSe, In2Se3, or Ag2Se. The germanium-chalcogenide layer is either Ge2Se3 or GeTe. Total ionizing dose radiation effects are also investigated for GeTe/SnSe/Ag and Ge2Se3/SnSe/Ag devices.
Cook, Beth Rose, "Electrical Switching Studies of Chalcogenide-Based Ion-Conducting Variable Resistance Devices" (2011). Boise State University Theses and Dissertations. Paper 193.