Date of Final Oral Examination (Defense)


Type of Culminating Activity


Degree Title

Master of Science in Electrical Engineering


Electrical and Computer Engineering

Major Advisor

Kristy A. Campbell, Ph.D.


In this work, ion-conducting devices using layers of chalcogenide materials are explored as potential non-volatile memory devices. This technology is also known in the literature as conductively bridged RAM (CBRAM), programmable metallization cell (PMC), and programmable conductor RAM (PCRAM; not to be confused with the acronym PCRAM as used to denote phase-change memory).

Electrical measurements with five different programming currents at four temperatures have been performed on two-terminal devices comprised of silver with a metal-selenide and germanium-chalcogenide layer. The metal-selenide layer is Sb2Se3, SnSe, PbSe, In2Se3, or Ag2Se. The germanium-chalcogenide layer is either Ge2Se3 or GeTe. Total ionizing dose radiation effects are also investigated for GeTe/SnSe/Ag and Ge2Se3/SnSe/Ag devices.