Date of Final Oral Examination (Defense)

5-2011

Type of Culminating Activity

Thesis

Degree Title

Master of Science in Electrical Engineering

Department

Electrical and Computer Engineering

Major Advisor

Kristy A. Campbell, Ph.D.

Abstract

In this work, ion-conducting devices using layers of chalcogenide materials are explored as potential non-volatile memory devices. This technology is also known in the literature as conductively bridged RAM (CBRAM), programmable metallization cell (PMC), and programmable conductor RAM (PCRAM; not to be confused with the acronym PCRAM as used to denote phase-change memory).

Electrical measurements with five different programming currents at four temperatures have been performed on two-terminal devices comprised of silver with a metal-selenide and germanium-chalcogenide layer. The metal-selenide layer is Sb2Se3, SnSe, PbSe, In2Se3, or Ag2Se. The germanium-chalcogenide layer is either Ge2Se3 or GeTe. Total ionizing dose radiation effects are also investigated for GeTe/SnSe/Ag and Ge2Se3/SnSe/Ag devices.

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