Publication Date

8-2010

Type of Culminating Activity

Thesis - Boise State University Access Only

Degree Title

Master of Science in Materials Science and Engineering

Department

Materials Science and Engineering

Major Advisor

Kristy A. Campbell, Ph.D.

Abstract

Ge2Se3 glasses were synthesized with the goal of creating new materials for use as multi-state phase-change memory (PCM) materials. Glasses were doped with small amounts (1% and 3%) of Sn, In, Sb, and Zn to investigate the effect these dopants would have on the phase-change behavior of the glass. Bulk glasses were analyzed using Raman spectroscopy and differential scanning calorimetry (DSC). Raman spectroscopy showed little change from the base Ge2Se3 glass upon doping; however, multiple crystallization states were observed in the DSC data, indicating that the materials may have the potential for multi-state memory behavior in electrical devices. Fabrication processes were then developed in order to create single-bit memory devices containing a single layer of the synthesized glasses that could be electrically tested. These processes included thermal evaporation of the chalcogenide glasses, plasma etching of silicon nitride, and ion milling of metals and chalcogenide glasses. The completed devices were then tested, and multiple phase-change responses were seen in the electrical data showing that the synthesized materials are potential multi-state PCM materials.

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