Gamma Radiation Induced Effects in Floppy and Rigid Ge-Containing Chalcogenide Thin Films
We explore the radiation induced effects in thin films from the Ge-Se to Ge-Te systems accompanied with silver radiation induced diffusion within these films, emphasizing two distinctive compositional representatives from both systems containing a high concentration of chalcogen or high concentration of Ge. The studies are conducted on blanket chalcogenide films or on device structures containing also a silver source. Data about the electrical conductivity as a function of the radiation dose were collected and discussed based on material characterization analysis. Raman Spectroscopy, X-ray Diffraction Spectroscopy, and Energy Dispersive X-ray Spectroscopy provided us with data about the structure, structural changes occurring as a result of radiation, molecular formations after Ag diffusion into the chalcogenide films, Ag lateral diffusion as a function of radiation and the level of oxidation of the studied films. Analysis of the electrical testing suggests application possibilities of the studied devices for radiation sensing for various conditions.
Ailavajhala, Mahesh S.; Butt, Darryl P.; and Mitkova, Maria. (2014). "Gamma Radiation Induced Effects in Floppy and Rigid Ge-Containing Chalcogenide Thin Films". Journal of Applied Physics, 115043502-1 - 043502-9. http://dx.doi.org/10.1063/1.4862561