Obtaining of Ni-Mn-Ga Magnetic Shape Memory Alloy by Annealing Electrochemically Deposited Ga/Mn/Ni Layers

Authors

Uwe Gaitzsch, Boise State University
Jessica Drache, Boise State University
Ken McDonald, Boise State University
Peter Müllner, Boise State UniversityFollow
Paul Lindquist, Boise State University

Document Type

Article

Publication Date

11-1-2012

Abstract

Ni-Mn-Ga thin films are promising candidates for MicroElectroMechanical Systems. Triple-layers of nickel, manganese, and gallium were electrodeposited from chemical solutions on to tungsten and molybdenum refractory metal substrates. These layered films were subsequently annealed at 800 to 900 °C to form a Ni-Mn-Ga Heusler alloy by diffusion. To evaluate the quality of the film, the magnetization of the Ni-Mn-Ga film was measured and normalized by the magnetization of nickel, yielding the relative magnetization. Due to the formation of Ni-Mn-Ga during annealing, the relative magnetization was approximately 2 times larger than the tri-layered as-plated film. These results are comparable to bulk Ni-Mn-Ga reference samples. X-ray diffraction measurements confirmed that the material was present as a mixture of L2₁-ordered austenite as well as modulated 10 M and non modulated martensite with manganese oxide impurities.

Publication Information

Gaitzsch, Uwe; Drache, Jessica; McDonald, Ken; Müllner, Peter; and Lindquist, Paul. (2012). "Obtaining of Ni-Mn-Ga Magnetic Shape Memory Alloy by Annealing Electrochemically Deposited Ga/Mn/Ni Layers". Thin Solid Films, 522171-174. https://doi.org/10.1016/j.tsf.2012.08.019