Abstract Title
Current-Voltage Response of Cosputtered Ge40Se60 Films
Abstract
We have been investigating thin film materials for use in fabricating a device which could perform as a ‘selector’ switch and eventually be fabricated in series with a memristor device in a cross-point array. A selector switch is needed in order to reduce sneak-path currents in an array comprised of resistive memory (such as memristors), when no transistors are used to isolate the memory elements. During this material investigation, we observed unexpected current-voltage responses for six of the tested films: Ge 40 Se 60 cosputtered with the elements W, Ti, Sn, Cr, Cu or C. The films were deposited with W electrodes using a shadow mask process in order to facilitate fast testing of the materials without the need to perform full device fabrication. The films show an increase in current during illumination with incandescent light. In the case of the C cosputtered film, a large capacitance effect was measured. These films are being investigated for light gated electronics applications and as energy storage devices.
Current-Voltage Response of Cosputtered Ge40Se60 Films
We have been investigating thin film materials for use in fabricating a device which could perform as a ‘selector’ switch and eventually be fabricated in series with a memristor device in a cross-point array. A selector switch is needed in order to reduce sneak-path currents in an array comprised of resistive memory (such as memristors), when no transistors are used to isolate the memory elements. During this material investigation, we observed unexpected current-voltage responses for six of the tested films: Ge 40 Se 60 cosputtered with the elements W, Ti, Sn, Cr, Cu or C. The films were deposited with W electrodes using a shadow mask process in order to facilitate fast testing of the materials without the need to perform full device fabrication. The films show an increase in current during illumination with incandescent light. In the case of the C cosputtered film, a large capacitance effect was measured. These films are being investigated for light gated electronics applications and as energy storage devices.