Creating a Microplasma Discharge Using an RF Generated Plasma Source
A device is needed that will withstand harsh environments because normal semiconductors are incapable of functioning at high temperatures (> 150 C) and in high radiation environment. Microplasma based devices are being developed for this purpose. The device consists of a slit structure in a dielectric material. The slits range in size from 0.3 to 1.2 mm. Device fabrication includes Low Temperature Co-fired Ceramic (LTCC), which contains an Radio-Frequency (RF) antenna and three DC terminals. The RF antenna operates from 800 to 1000 MHz. The DC terminals serve the same purpose as in a normal transistor. Results of the experimental measurements of the device Current-Voltage characteristics will be presented for a range of gas pressures, RF powers, and slit dimensions.
This document is currently not available here.